MX29LV040TC-55 - Macronix International - 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY

Quick Detail:

4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY

Description:

The MX29LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29LV040 is packaged in 32-pin PLCC and TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

The standard MX29LV040 offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV040 has separate chip enable (CE) and output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29LV040 uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.

MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV040 uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto Program/ Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

Applications:

• Extended single - supply voltage range 2.7V to 3.6V

• 524,288 x 8 only

• Single power supply operation

- 3.0V only operation for read, erase and program operation

• Fast access time: 55R/70/90ns

• Low power consumption

- 20mA maximum active current

- 0.2uA typical standby current

• Command register architecture

- 8 equal sector of 64K-Byte each

- Byte Programming (9us typical)

- Sector Erase (Sector structure 64K-Byte x8)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with Erase Suspend capability.

- Automatically program and verify data at specified address

• Erase suspend/Erase Resume

- Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase.

• Status Reply

- Data polling & Toggle bit for detection of program and erase operation completion.

• Sector protection

- Hardware method to disable any combination of sectors from program or erase operations

- Any combination of sectors can be erased with erase suspend/resume function.

- Tempoary sector unprotect allows code changes in previously locked sectors.

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Low VCC write inhibit is equal to or less than 2.3V

• Package type:

- 32-pin PLCC

- 32-pin TSOP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power supply Flash

Specifications:

Competitive Advantage:

Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .

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