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AT28BV64B-20TU- ATMEL Corporation - 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Prote

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AT28BV64B-20TU- ATMEL Corporation - 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Prote

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Place of Origin :PHILIPPINE
Brand Name :ATMEL Corporation
Certification :Lead free / RoHS Compliant
Model Number :AT28BV64B-20TU
MOQ :5 PCS
Price :Contace sales group 1
Packaging Details :Standard Packaging
Delivery Time :2-3 days
Payment Terms :T/T in advance, Paypal, Western Union
Supply Ability :5000
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Quick Detail:

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

Description:

The AT28BV64B is a high-performance electrically erasable programmable read onlymemory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is

deselected, the CMOS standby current is less than 20 µA.

The AT28BV64B is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64 byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin.

Atmel’s AT28BV64B has additional features to ensure high quality and manufacturability. A software data protection mechanism guards against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking.

Applications:

• Single 2.7V to 3.6V Supply

• Hardware and Software Data Protection

• Low Power Dissipation

– 15 mA Active Current

– 20 µA CMOS Standby Current

• Fast Read Access Time – 200 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

• Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum

– 1 to 64 Byte Page Write Operation

• DATA Polling for End of Write Detection

• High-reliability CMOS Technology

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

• JEDEC Approved Byte-wide Pinout

• Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

Specifications:

Datasheets

AT28BV64B

Product Photos

28-TSOP

Standard Package

234

Category

Integrated Circuits (ICs)

Family

Memory

Series

-

Packaging

Tray

Format - Memory

EEPROMs - Parallel

Memory Type

EEPROM

Memory Size

64K (8K x 8)

Speed

200ns

Interface

Parallel

Voltage - Supply

2.7 V ~ 3.6 V

Operating Temperature

-40°C ~ 85°C

Package / Case

28-TSSOP (0.465", 11.80mm Width)

Supplier Device Package

28-TSOP

Catalog Page

1091 (CN081 PDF)

Other Names

AT28BV64B20TU

Competitive Advantage:

Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .


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