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Numonyxâ„¢ Embedded Flash Memory (J3 v. D)
Description:
This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v. D) device features, operation, and specifications.
The Numonyx™ Embedded Flash Memory J3 Version D (J3 v. D) provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based Intel* 0.13 µm ETOX™ VIII process technology. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the Numonyx™ Embedded Flash Memory (J3 v. D) device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The Numonyx™ Embedded Flash Memory (J3 v. D) device takes advantage of the proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.
Applications:
„ Architecture
— High-density symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
„ Performance
— 75 ns Initial Access Speed (128/64/32
-Mbit densities)
— 95 ns Initial Access Speed (256 Mbit only)
— 25 ns 8-word and 4-word Asynchronous
page-mode reads
— 32-Byte Write buffer
— 4 µs per Byte Effective programming time
„ System Voltage and Power
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
„ Packaging
— 56-Lead TSOP package (32, 64, 128 Mbit
only)
— 64-Ball Numonyx Easy BGA package (32,
42, 128 and 256 Mbit)
„ Security
— Enhanced security options for code
protection
— 128-bit Protection Register
— 64-bit Unique device identifier
— 64-bit User-programmable OTP cells
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power
transitions
„ Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash
Interface (CFI) Compatible
„ Quality and Reliability
— Operating temperature:
-40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process
Specifications:
|
Datasheets |
J3vD Embedded Flash Memory |
|
Product Photos |
56-TSOP |
|
Standard Package |
96 |
|
Category |
Integrated Circuits (ICs) |
|
Family |
Memory |
|
Series |
StrataFlash™ |
|
Packaging |
Tray |
|
Format - Memory |
FLASH |
|
Memory Type |
FLASH - NOR |
|
Memory Size |
128M (16M x 8, 8M x 16) |
|
Speed |
75ns |
|
Interface |
Parallel |
|
Voltage - Supply |
2.7 V ~ 3.6 V |
|
Operating Temperature |
-40°C ~ 85°C |
|
Package / Case |
56-TFSOP (0.724", 18.40mm Width) |
|
Supplier Device Package |
56-TSOP (18.4x14) |
|
Other Names |
872764 |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
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