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Quick Detail:
MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Description:
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz..
Low Noise - 2.5 dB @ 500 MHZ
High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective MacroX Package
Applications:
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
Specifications:
Datasheets | MRF581(A,G,AG) |
Product Photos | PowerMacro Pkg |
Catalog Drawings | MRF5(5,8)x(A,G) Top |
Standard Package | 500 |
Category | Discrete Semiconductor Products |
Family | RF Transistors (BJT) |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 18V |
Frequency - Transition | 5GHz |
Noise Figure (dB Typ @ f) | 3dB ~ 3.5dB @ 500MHz |
Gain | 13dB ~ 15.5dB |
Power - Max | 1.25W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
Current - Collector (Ic) (Max) | 200mA |
Mounting Type | Surface Mount |
Package / Case | Micro-X ceramic (84C) |
Supplier Device Package | Micro-X ceramic (84C) |
Other Names | MRF581MI |
Competitive Advantage:
Warranty :180days for all goods
Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.
Mega Source Electronics stocks components ready to ship. Hard to find, obsolete and highly allocated integrated circuits and semiconductors are all can be found by us.
Mega Source Electronics has established a well-developed logistics system and global logistics network, which can guarantee our service very quick, convenient and efficient.
Tag:
MRF581A